THE STUDY OF THE IMPURITY IN HK FILM Yingming Liu 1* , Qiuming Huang1, and Haifeng Zhou1 1 ShanghaiHuali Microelectronics Corporation 568 GaosiRd., Pudongdistrict, Shanghai,China *Corresponding Author ’sEmail: liuyingming@hlmc.cn ABSTRACT As CMOS size scaling down, HKMG was introduced into CMOS manufacture process to replace Poly-SiON scheme earlier at 45nm node. In many HK materials, HfO2 was fin

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