AmorphousSilicon/CrystallineSiliconHeterojunctionSolarCells.

1Introduction

1.1BasicStructure

1.2Historyofa-Si:H/c-SiDeviceDevelopment

1.3EconomicAspects

2UsefulMaterialParameters

2.1UsefulDataofMonocrystallineSilicon

2.2UsefulDataofMulticrystallineSilicon

2.3UsefulDataofMicrocrystallineSilicon

2.4UsefulDataofAmorphousSiliconwithRespecttoHeterojunctionSolarCells

3Manufacturing

3.1LappingandPolishing

3.2Texturing

3.3Cleaning

3.4PECVDofi-,n-,andp-Layers

3.5TCO

3.6MetallizationandScreenPrinting

4Concepts

4.1Conventionalna-Si:H/pc-SiCell

4.2Bifaciala-Si:H/c-SiHeterojunctionSolarCellwithIntrinsicThinLayer,HITStructure

4.3a-Si:H/c-SiHeterocontactCellWithouti-Layer

4.4OtherConceptsforImprovedEntranceWindows

4.5a-Si:H/c-SiHeterocontactCellwithInvertedGeometry

4.6InterdigitatedHITCell

5ProblemsandChallenges

5.1ChoiceoftheBaseMaterial,ImpactoftheDoping,n/pVersusp/n

5.2SurfaceStates

5.3SurfacePassivation

5.4PECV-DepositedEmitterandBackSurfaceField

6MeasurementTechniques

6.1Absorption,Reflection,andTransmission

6.2ExcessChargeCarrierLifetime

6.3Electroluminescence

6.4a-SiCharacterization

6.5ElectronicDeviceCharacterization

7Simulation

7.1AFORS-HET

7.2ComparisonwithExperiments

8Long-TermStabilityandDegradation

8.1Long-TermStability

8.2RadiationHardness

9StateoftheArt

10Silicon-BasedHeterojunctionSolarCellsinChina

10.1IntroductionoftheActiveGroupsinthisAreainChina.

10.2ExperimentalStudies

10.3TheoreticalSimulation

References2100433B