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贴片三极管
BV4贴片三极管印字
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB624 TRANSISTOR (PNP) FEATURES z High DC current gain. h FE :200 TYP .(V CE =-1V,I C= -100mA) z Complimentary to 2SD596. MAXIMUM RATINGS (T a=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltag
贴片三极管丝印ZR
A,Jun,2013 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD601A TRANSISTOR (NPN) FEATURE High hFE Low VCE(sat) For general amplification Complementary to 2SB709A MAXIMUM RATINGS (T a=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V I